IXBH2N250 دیتاشیت

IXB(H,T)2N250

مشخصات دیتاشیت

نام دیتاشیت IXB(H,T)2N250
حجم فایل 243.826 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت IXB(H,T)2N250

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مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 5A
  • Power Dissipation (Pd): 32W
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): -
  • Total Gate Charge (Qg@Ic,Vge): 10.6nC
  • Pulsed Collector Current (Icm): 13A
  • Diode Reverse Recovery Time (Trr): 920ns
  • Collector-Emitter Breakdown Voltage (Vces): 2500V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.5V@15V,2A
  • Package: TO-247
  • Manufacturer: IXYS
  • Series: BIMOSFET™
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 5A
  • Current - Collector Pulsed (Icm): 13A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
  • Power - Max: 32W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 10.6nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 920ns
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
  • detail: IGBT 2500V 5A 32W Through Hole TO-247AD (IXBH)

محصولات مشابه